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US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Semiconductor structure and method manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,224, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structure and method ... और पढ़ें


US Patent Issued to DB HiTek on July 21 for "High voltage semiconductor device and method of manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,225, issued on July 21, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea). "High voltage semiconductor device and method of manuf... और पढ़ें


US Patent Issued to GLOBALFOUNDRIES Singapore on July 21 for "Metal-oxide semiconductor transistors" (Singaporean Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,226, issued on July 21, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore). "Metal-oxide semiconductor transistors" was invent... और पढ़ें


US Patent Issued to FLOSFIA on July 21 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,227, issued on July 21, was assigned to FLOSFIA INC. (Kyoto, Japan). "Semiconductor device" was invented by Masahiro Sugimoto (Kyoto, Japan... और पढ़ें


US Patent Issued to FUJI ELECTRIC, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on July 21 for "Superjunction semiconductor device having varying impurity concentrations between semiconductor substrate and parallel PN structure" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,228, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan) and NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND T... और पढ़ें


US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 21 for "Semiconductor device with split-gate and method forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,229, issued on July 21, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Semiconductor device with split-gate... और पढ़ें


US Patent Issued to Nexperia on July 21 for "Semiconductor device comprising mutually separated trench structures" (Dutch Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,230, issued on July 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands). "Semiconductor device comprising mutually separated trench s... और पढ़ें


US Patent Issued to FUJI ELECTRIC on July 21 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,231, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device" was invented by Akimasa Kinoshita ... और पढ़ें


US Patent Issued to AUO on July 21 for "Manufacturing method of thin film transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,232, issued on July 21, was assigned to AUO Corp. (Hsinchu City, Taiwan). "Manufacturing method of thin film transistor" was invented by Ya... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Raised source/drain oxide semiconducting thin film transistor and methods of making the same" (Belgian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,233, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Raised source/drain oxide semicondu... और पढ़ें